Nonvolatile memory with program while program verify

ABSTRACT

A page mode program sequence is described that includes first and second bias applying cycles. In the first cycle, a program bias is applied to a first part of a page of memory cells, while a program verify bias is applied to, and data is sensed from, a second part of the page. In this manner, a first part of the page is programmed, while a second part of the page is verified. This operation is followed by a second bias applying cycle, in which a program bias is applied to the second part of the page, while a program verify bias is applied to, and data is sensed from, the first part of the page.

RELATED APPLICATION DATA

The present application is a continuation of U.S. application Ser. No.11/235,881, filed 26 Sept. 2005, now U.S. Pat. No. 7,130,222.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to nonvolatile memory devices, includingflash memory and page mode flash memory, which include program andprogram verify operations.

2. Description of Related Art

Nonvolatile memory devices typically include a memory array comprisingmemory cells that maintain their data even when electrical power hasbeen removed from the device. There are a variety of types ofnonvolatile memory devices. One type includes so-called “read onlymemory,” like mask ROM in which the data is stored in the memory cell byimplanting impurities in the channel region of MOS transistors. The datastored in mask ROM devices, and other nonvolatile read only memorydevices, cannot be changed in the field. Another type of nonvolatilememory device includes electrically erasable and programmable memorycells, such as flash memory. The data stored in flash memory cells, andother nonvolatile electrically erasable and programmable memory cells,can be changed in the field using electronic programming and erasingprocedures. Representative flash memory technologies include floatinggate memory cells and charge trapping memory cells such as SONOS, NROM,PHINES and the like.

There are a variety of biasing procedures that are used for programmingand erasing memory cells in flash memory. The biasing procedures forfloating gate memory cells and charge trapping memory cells causetunneling of electrons and/or holes into and out of the floating gatesor charge trapping structures. The concentration of charge held in thefloating gates or the charge trapping structures has an effect on thethreshold voltage of the memory cell. Thus, by controlling the amount ofcharge held in the floating gates or in the charge trapping structures,the threshold voltage of the memory cell can be set, and data stored.

Due to demand for faster access times combined with large, high-densityarrays for flash memory, page read and burst read flash memories havebeen developed. In normal flash memory, the read operation is executedword by word so that within a specified time, such as time after addresstransition (TAA of for example 100 ns to 70 ns or less) or time after achip enable signal (TCE), only one 16-bit word is addressed, itscontents sensed, and its data output. In page mode devices, the inputand output structures for the array may include a fast access bufferstoring a page including for example, 1024 bits or 2048 bits, on thechip. The programming and reading procedures use the page buffer toimprove throughput, and in some cases are set up to provide foraddressing more than one word at a time, such as four words (64 bits) ormore, during programming to and reading from the page buffer. Datastored in the page buffer can be read out in burst mode or otherwisewith very short cycle times.

According to a typical process, to program a page in the array, a pagebuffer is loaded with data to be programmed, which is then transferredin chunks to bit latches associated with a set of sense amplifiers,including for example 32 or 64 coupled via decoding circuits to columnsin the array, and programming the chunks of the page in parallel, withthe program bias for each bit line being controlled by the data in thecorresponding bit latch. A verify procedure for page mode programmingcan include automatically clearing the bits in the page buffer whichcorrespond to cells that are successfully programmed. The data stored inthe page buffer is then read to confirm that all bits have been clearedto indicate a successful page program operation.

As mentioned above, the operation to program the cells in a flash memorydevice typically involves a procedure that causes injection or ejectionof charge into a charge storage structure that affects the threshold ofthe cell. The charge injection or ejection procedure must be tightlycontrolled for modern, high density operations. For multiple bit percell embodiments, even greater control of the charge injection orejection operation is required.

Because of the need for precise control of cell thresholds in memorydevices along with variations in memory cell characteristics, variationsin voltages applied, and variations in other parameters across an array,the biasing procedures used for programming and erasing operations inflash memory can result in non-uniform levels of charge stored in thecells distributed across the array. Therefore, the biasing proceduresapplied in many devices include a sequence of programming with verifyoperations between each pulse, or between each set of pulses. A typicalverify process includes driving word line voltages to program verifylevels, which are changed slightly from the standard read level in orderto provide program or erase margin. Then, data is sensed from the memorycells to determine whether each cell has been successfully programmed orerased. If the verify process fails, then retry program pulses followedby verify operations, are applied iteratively until a successful verifyis achieved, or a maximum number of retries is reached.

For precise control of the threshold, memory devices are designed sothat several iterations of the program and verify procedure may berequired, that cause small increments in change of the thresholdvoltages for convergence on a target threshold level in a given cell onthe device. The time required for a program operation therefore includesa plurality of cycles including both the program pulse and the programverify interval. See, U.S. Pat. No. 6,714,457 by Hsu et al.; U.S. Pat.No. 5,835,414 by Hung et al.; U.S. Pat. No. 5,748,535 by Takahashi etal.; U.S. Pat. No. 5,751,637 by Hung et al.; U.S. Pat. No. 5,787,039 byLiu et al.; U.S. Pat. No. 5,638,326 by Hollmer; and U.S. Pat. No.6,141,253 by Lin.

It is desirable to provide an architecture for nonvolatile memory andprogram and program verify procedures for such memory, that reduces thetime required for the program operation while supporting precise controlover memory cell threshold voltages.

SUMMARY OF THE INVENTION

The present invention provides a method for programming a nonvolatilememory device with input data in memory cells identified by respectivememory cell addresses. The method includes loading a set of data to bestored in a set of memory cells in buffer circuitry, where the set ofmemory cells consists of memory cells that have identical higher orderaddress bits, such as memory cells in a single page. A program sequenceis executed that includes first and second bias applying cycles. In thefirst cycle, a program bias is applied to a first part of the set ofmemory cells, while a program verify bias is applied to, and data issensed from, a second part of the set of memory cells. In this manner, afirst part of the set of memory cells is programmed, while a second partof the set of memory cells is verified. This operation is followed by asecond bias applying cycle, in which a program bias is applied to thesecond part of the set of memory cells, while a program verify bias isapplied to, and data is sensed from, the first part of the set of memorycells. These two bias applying cycles result in a program pulse beingapplied to both the first and second parts of the set of memory cells.In an embodiment, the program sequence includes updating the set of datato be programmed in response to the sensing operation during the firstand second bias applying cycles. If the updated set of data does notindicate success of the programming sequence, then the program sequenceis retried using the updated set of data. This sequence of two biasapplying cycles is repeated until both parts of the set of memory cellsare successfully programmed. In this manner, the time required forverifying the programming of data in the set of memory cells is hiddenwithin the time used for programming, saving substantial time in theoverall program operation. The technology is suitable for devices inwhich when multiple program pulses are required to achieve tight controlover the threshold voltages of the cells being programmed.

The nonvolatile memory device includes structures that support theprogram while verify bias cycles. For example, in one embodiment the setof memory cells comprises cells in a row of cells in a memory array. Thefirst part of the set of memory cells is coupled to a first word linealong the row, and the second part of the said memory cells is coupledto a second word line along the row. Thus, the array is split along therow, and each of the two word lines along the row has an independentword line driver activated in response to the same higher order addressbits.

In one embodiment, the memory cells along the row are accessed by a pageaddress, where a page includes a large number of cells such as 1024 or2048 cells. The set of memory cells subject of the first and second biasapplying cycles may comprise in this example 64 memory cells or 128memory cells of the page. The first part of the set of memory cells maycomprise a chunk of 16, 32 or 64 memory cells coupled to one of the wordlines, while the second part of the set of memory cells may comprise achunk of 16, 32 or 64 memory cells coupled to the second word line alongthe row. In another embodiment, the set of memory cells subject of theprogramming sequence comprises cells in a first row of memory cells in afirst sector of the array coupled to a first word line and cells in asecond row of memory cells in a second sector in the array coupled to asecond word line. The first word line and the second word line aredriven by independent word line drivers activated in response the samehigher order address bits, such that a page includes memory cells alonga row in the first sector and memory cells along another row in thesecond sector.

An embodiment of the method includes storing a page of data in a bufferon the memory device, which is to be stored in a corresponding page ofmemory cells identified by a set of higher order address bits. Chunks ofdata from the buffer are loaded in bit latches coupled to the decodingcircuitry. The program sequence comprising the first and second biasapplying cycles is executed on a first chunk in the first part of thesplit page and a second chunk in the second part of the split page,repeatedly until the pair of chunks is successfully programmed, and thenthe next pair of chunks is loaded from the buffer to the bit latches,and programmed until all the data of the page is successfullyprogrammed.

An integrated circuit is described supporting the program while verifymethod described above. The integrated circuit includes an array ofmemory cell including a plurality of bit lines and a plurality of wordlines. Decoder circuitry is coupled to the plurality of bit lines andthe plurality of word lines that is responsive to addresses to accessmemory cells in the array, and to selectively apply a program bias and aprogram verify bias to first and second word lines having a commonhigher order address bits, such as a page address. Sense circuitry iscoupled to the array, and arranged to sense data in a plurality ofmemory cells, such as a chunk of memory cells as discussed above, inparallel. Buffer circuitry is coupled to the array to support theprogram operations. In addition, a state machine or other circuitry iscoupled to the array, decoder circuitry and buffer circuitry to controlexecution a program operations. The program operations included themethods described above.

In embodiments of the invention, the buffer circuitry comprises a pagebuffer which stores a page of data to be stored in a corresponding pageof memory cells. In another embodiment, the buffer circuitry comprises aplurality of latches coupled with the decoder circuitry and associatedwith the sense amplifiers. The plurality of latches store a chunk ofdata from the page to be stored which indicates whether the memory cellon a corresponding bit line in the array needs programming during aparticular bias applying cycle. In yet another embodiment, the buffercircuitry includes both a page buffer, and a plurality of latches asdiscussed above.

Technology described herein includes an integrated circuit memoryarchitecture having a split page organization, where a program bias canbe applied to a first part of the split page, while a program verifybias is applied to a second part of the split page. High speed page modeoperations are supported, achieving improved control over thresholdvoltages achieved during programming, and reduced times required forprogramming because all or part of the time need for program verify ishidden within the time needed for applying programming pulses.

Other aspects and advantages of the present invention can be seen onreview of the drawings, the detailed description and the claims, whichfollow.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of an integrated circuit including nonvolatilememory with program while program verify structures.

FIG. 2 is a simplified diagram of structures supporting program whileverify in an integrated circuit memory.

FIG. 3 is a simplified diagram of alternative structures supportingprogram while verify in an integrated circuit memory.

FIG. 4 illustrates circuitry coupled with a column decoder and bitlines, supporting program while verify operations in an integratedcircuit memory.

FIG. 5 illustrates circuitry coupled with a row decoder and word lines,supporting program while verify operations in an integrated circuitmemory.

FIGS. 6A-6C comprise simplified diagrams referred to for the purpose ofillustrating program while verify operations in an integrated circuitmemory.

FIG. 7 is a flow chart for a program while verify operation suitable foran integrated circuit memory.

DETAILED DESCRIPTION

A detailed description of embodiments of the present invention isprovided with reference to the FIGS. 1-7.

FIG. 1 is a simplified block diagram of a single chip, integratedcircuit memory device 9 supporting page mode operations and programwhile verify operations. The memory device 9 includes a flash memoryarray 10 that includes an array of memory cells typically organized intoa plurality of sectors, and accessible using a plurality of bit lines, aplurality of word lines and a plurality of sector select lines. A rowdecoder 11 is used for accessing selected word lines and sectors. Theplurality of word lines include pairs of word lines that are accessed inresponse to identical higher order address bits, as explained below. AY-select column decoder 12 is used for accessing selected bit lines. Aplurality of sense amplifiers 13, or other sensing circuitry, is coupledto data lines from the output of the column decoder 12, and arranged tosense two chunks of data in parallel, where each chunk includes forexample 32 bits.

In the illustrated example, a page of data includes 1024-bits. The twochunks together amount to 64 bits in this example, which can be read inparallel through 64 sense amplifiers coupled to the column decoder 12.The 64 bits correspond to four words, each of which includes two bytesthat are 8 bits wide. Other embodiments include a greater number of bitsper page, including for example 2048 bits per page or more, and largeror smaller chunks. The sense amplifiers 13 with associated bit latchesused during program operations are coupled to column decoder 12. Thesense amplifiers 13 and bit latches are coupled to a page buffer 15, sothat data can be moved from the sense amplifiers 13 to the page buffer15 and from the page buffer 15 to the bit latches in support of read,erase and program operations.

Addressing circuits 20 are included on the memory device shown inFIG. 1. The addressing circuits 20 provide addresses to the row decoder11, the column decoder 12, and to the page buffer 15. An I/O bus 19 iscoupled to the page buffer 15.

A state machine 21 for page mode read, erase and program operations,including program while verify operations, is included on the integratedcircuit. In support of the operations of the state machine, read, eraseand program supply voltages are generated and controlled by circuitry 22on the circuit. The state machine 21 comprises a processor executinginstructions, programmable logic structures, dedicated logic, or variouscombinations thereof.

The array 10 is configured so that the set of cells arranged to store apage of data identified by identical higher order address bits comprisesa first part that is coupled to a first word line, and a second partthat is coupled to a second word line. The state machine 21 and decoders11 and 12 are configured so that a program bias can be applied to bitlines and word lines coupled to cells storing a chunk of data in thefirst part of the page, while a program verify bias is applied to bitlines and word lines coupled to cells storing another chunk of data inthe second part of the page. In a ping-pong type operation, the programwhile verify operation includes a sequence that programs cells in thefirst part of the page while verifying cells in the second part of thepage, then programs cells in the second part of the page while verifyingcells in the first part of the page. Thus, the time required forprogramming data in the first part of the page substantially overlapswith the time required for verifying data in the second part of thepage. Where each part of the page requires multiple program and programverify steps to achieve precise control over cell threshold voltages,the program operation can be achieved by applying technology describedherein with little or no additional time being allotted for verifyoperations.

FIG. 2 is a simplified diagram of an array structure having split pages.As shown, the array is organized into a left bank 50 and a right bank51. X-decoder 52 and X-decoder 53 are coupled to the left bank and theright bank respectively. Word lines 54 in the left bank and 55 in theright bank are arranged along a row of memory cells in the array. Wordline drivers 58 and 59 drive the word line 54 and word line 55respectively in response to the X-decoders 52, 53 based on a pageaddress, which includes higher order bits of an address for a memorycell. During a program operation, the bias voltages applied by the wordline drivers 58 and 59 can be separately controlled as described below.Y-decoder 64 is coupled to the bit lines in the array, and is operablein response to addresses to select a first chunk of bit lines for a leftset 66 of n sense amplifiers SA[0:(n−1)] and a second chunk of bit linesfor a right set 67 of n sense amplifiers SA[n:(2n−1)]. During a programoperation, the left set 66 and the right set 67 can be selectivelyoperated for applying a program bias or for sensing data, as describedbelow. The sets 66, 67 of sense amplifiers are coupled via bus 68 to thepage buffer implemented using static random access memory SRAM or otherread/write storage technology. The page buffer includes a left bank 70storing a plurality of n-bit chunks of data (M×n bits) and a right bank71 storing a plurality of n-bit chunks of data (M×n bits). The pagebuffer can be logically or physically separated into left and rightbanks in various embodiments. Conceptually, a program operation includesthe data flow represented by arrows (a)-(d) in FIG. 2. The data flowarrow (a) represents loading a chunk of data from the page buffer to bitlatches associated with the left set 66 of sense amplifiers and applyingprogram bias for programming of the left bank 50. The data flow arrow(b) represents applying verify bias, sensing data from the cell andupdating of the data in the page buffer in response to a verifyoperation on the right bank 51, and can be accomplished while theoperation represented by data flow arrow (a) is accomplished. The dataflow arrow (c) represents loading a chunk of data from the page bufferto bit latches associated with the right set 67 of sense amplifiers andapplying program bias for programming of the right bank 51. The dataflow arrow (d) represents applying verify bias, sensing data from thecell and updating of the data in the page buffer in response to a verifyoperation on the left bank 50, and can be accomplished while theoperation represented by data flow arrow (c) is accomplished. Thus afirst part of the page of data that is stored in cells coupled to theword lines 54 and 55 is programmed while a second part of the page adata that is stored in cells coupled to word lines 54 and 55 is verifiedusing separate data paths and bias voltages.

FIG. 3 is a simplified diagram of an alternative array structure havingsplit pages. As shown the array is organized into a top sector 80 and abottom sector 81, including word line 82 arranged along a row of cellsin the top sector 80 and word line 83 arranged along a row of cells inthe bottom sector 81. An X-decoder (not shown) selects word line drivers84 and 85, which drive word lines 82 and 83 respectively, in response toan identical page address.

The top sector 80 includes a left bank in which global bit lines, suchas bit line 86, are connected and disconnected to local bit linescoupled to the cells in corresponding columns using a top selectstructure SELT(n) and a bottom select structure SELB(n). The top selectstructure SELT(n) and bottom select structure SELB(n) are controlled bythe sector select lines SECn, that are in turn generated by a sectordecoder. In addition, the top sector 80 includes a right bank in whichglobal bit lines, such as bit line 87, are connected and disconnected tolocal bit lines coupled to the cells in corresponding columns using atop select structure SELT(n−1) and a bottom select structure SELB(n−1),which are controlled by the sector select lines SECn−1.

The bottom sector 81 includes a left bank in which global bit lines,such as bit line 86, are connected and disconnected to local bit linescoupled to the cells in corresponding columns using a top selectstructure SELT(n−1) and a bottom select structure SELB(n−1). The topselect structure SELT(n−1) and bottom select structure SELB(n−1) arecontrolled by the sector select lines SECn−1, that are in turn generatedby a sector decoder. In addition, the bottom sector 81 includes a rightbank in which global bit lines, such as bit line 87, are connected anddisconnected to local bit lines coupled to the cells in correspondingcolumns using a top select structure SELT(n) and a bottom selectstructure SELB(n), which are controlled by the sector select lines SECn.

Also shown in FIG. 3, are the column decoding, sense amplifier and pagebuffer structures described above with reference to FIG. 2, and aregiven like reference numerals.

Accordingly, the array shown in FIG. 3 is arranged so that a first partof the page of data is stored in memory cells, such as cell A, in theleft bank of the top sector 80, and a second part of the page a data isstored in memory cells, such as cell B, in the right bank of the bottomsector 81. In this manner, bias voltages applied to the word line 82 anddelivered to cell A can be different from the bias voltages applied toword line 83 and delivered to cell B during a program operation.

FIG. 4 illustrates the current flow paths for a program while verifyoperation in an embodiment of the memory device having split pages, suchas described with reference to FIG. 2. Basically, the program operationfor cell A in a first part of the page is executed along current flowpaths 100 and 101, while the verify operation for cell B in a secondpart of the page is executed along current flow paths 102 and 103. Asillustrated, cell A is situated in a row of memory cells coupled to wordline WL0A, while cell B is situated in a row of memory cells coupled toword line WL0B. The word line WL0A is controlled by word line driver104, while the word line WL0B is controlled by word line driver 105 inthe illustrated embodiment. The word line drivers 104 and 105 can beoperated selectively during a program while verify operation to applydifferent bias voltages, using structures is such as those describedbelow with reference to FIG. 5.

Cell A, and other cells in the left bank of the array, are coupled vialocal bit lines to a top select structure including the top blocktransistor 107 controlled by signal BLB(n), and a bottom selectstructure including the bottom block transistor 106 controlled by signalBLT(n). From the top block transistor 107, the current flow proceeds toa global bit line through Y-pass transistors 110 which are part of thecolumn decoder circuitry, to a selector 112 controlled by the signalSELLECTBL1. The selector 112 is controlled during a program operation todirect a current flow to a bit latch 116, referred to as a “need pgm?”latch. The bit latch 116 is powered by a voltage regulator 118, whichdelivers the program bias voltage under the control of the control statemachine on the device. The voltage regulator 118 is driven by on chipcharge pumps and off chip power supplies in various embodiments of thedescribed technology.

In a representative embodiments, the memory cells comprise nitridecharge trapping cells or floating gate cells, programmed by channel hotelectron injection which is induced by applying a high positive voltageon a bit line with a positive voltage on the word line, and ground onthe source. The selector 112 is controlled during a verify operation, orduring a read operation to direct current flow through the load 114. Thevoltage applied to the bit line during a sensing operation is also apositive voltage delivered the load 114. Sense amplifier SA0 is coupledto the load 114, and generates sensed output data DO0.

Cell B, and other cells in the right bank of the array, are coupled vialocal bit lines to a top select structure including the top blocktransistor 109 controlled by signal BLB(n), and a bottom selectstructure including the bottom block transistor 108 controlled by signalBLT(n). From the top block transistor 109, the current flow proceeds toa global bit line through Y-pass transistors 111 which are part of thecolumn decoder circuitry, to a selector 113 controlled by the signalSELECTBL2. The selector 113 is controlled during a read or verifyoperation to direct a current flow through the load 115. Sense amplifierSA63 is coupled to the load 115, and generates sensed output data DO63.During a verify operation, the sensed output data DO63 is compared withdata in the bit latch 117, or data in a page buffer corresponding to thememory cell, to determine whether a program pulse needs to be applied tothe cell in a following program operation. The selector 112 iscontrolled during a program operation to direct current flow to a bitlatch 117, referred to as a “need pgm?” latch. The bit latch 117 ispowered by a voltage regulator 118, which delivers the program biasvoltage under the control of the control state machine on the device.

FIG. 5 illustrates structures and word line drivers used for applyingdifferent bias voltages to word line WL0A and word line WL0B, during aprogram while verify operation. The structures include a regulatorcircuit 150 then delivers a program level voltage on line 151 and aprogram verify level voltage on line 152. In the example applyingchannel hot electron injection, as mentioned above, the program bias andthe program verify bias are both positive voltages that can be appliedat the same time to the array. The regulator circuit 150 is driven by onchip charge pumps and off chip power supplies in various embodiments ofthe described technology. The voltages on lines 151 and 152 are appliedto a first selector 154 that is controlled by the signal SELECTWL1 andto a second selector 153 that is controlled by the signal SELECTWL2.

During an operation applying a program bias to word line WL0A, selector154 is operated to apply the program level voltage on the global wordline GWL1, at for example about 10 V in one embodiment. The global wordline GWL1 is applied to word line drivers in the left bank of the array,including the driver coupled to the word line WL0A, comprisingtransistors 156, 158 and 160. Transistor 156 is a p-channel transistorformed in a well that is coupled to its drain. Transistors 158 and 160are n-channel transistors, each having its well coupled to the bias lineWLDRVSS, which is typically ground or another reference level, like aprogram inhibit voltage, applied to the word line drivers. When the wordline WL0A is selected, the decoder circuitry will apply a ground signalto the gates of transistor 156 and 160, and a supply potential to thegate of transistor 158. The program voltage from the global word lineGWL1 flows through the transistors 156 and 158 to the word line WL0A.

During an operation applying a program verify bias to word line WL0B,selector 153 is operated to apply the program verify level voltage onthe global word line GWL2, at for example about 5 V in one embodiment.The global word line GWL2 is applied to word line drivers in the rightbank of the array, including the driver coupled to the word line WL0B,comprising transistors 157, 159 and 161. Transistor 159 is a p-channeltransistor formed in a well that is coupled to its drain. Transistors157 and 161 are n-channel transistors, each having its well coupled tothe bias line WLDRVSS, which is typically ground or another referencelevel like a program inhibit voltage, applied to the word line drivers.When the word line WL0B is selected, the decoder circuitry will apply aground signal to the gates of transistor 159 and 161, and a supplypotential to the gate of transistor 157. The program verify voltage fromthe global word line GWL2 flows through the transistors 157 and 159 tothe word line WL0B.

Thus, the structures shown in FIG. 4 and FIG. 5 are representative ofcircuitry on an integrated circuit that supports applying a program biasvoltage to memory cells storing data from a page the left bank of anarray, while applying a program verify bias voltage to memory cellsstoring data from the same page in the right bank of the array, and viceversa.

FIGS. 6A-6C are simplified diagrams used for the purpose of theexplanation of a program while verify sequence. As shown in FIG. 6A,components of the integrated circuit including an array 200, a first set201 of sense amplifiers SA[0:31] and a second set 202 of senseamplifiers SA[32:63]. A data bus 203 is coupled between the first andsecond sets 201, 202 of sense amplifiers and a page buffer 204implemented as an SRAM. An the illustrated example, a chunk of datacomprises 32 bits and can be sensed and programmed in parallel using thedata structures of a split page device, such as the structures describedabove with reference to FIGS. 4 and 5.

Three steps of a program while verify operation are illustrated in FIG.6A. In the first step (step 1), a page a data is loaded in the pagebuffer 204. The page consists of a plurality of 64 bit wide sets ofdata, each 64 bit wide set including a left chunk consisting of bits0-31, and a right chunk consisting of bits and 32-34. In the second step(step 2), 64 bits of data are loaded on the bus 203, including the leftchunk of data and thirty two 1's in the position of the right chunk ofdata. In the third step (step 3), data is transferred from the data busto the bit latches associated with the sense amplifiers. The bit latchesassociated with sense amplifiers SA[0:31] are loaded with the left chunkof data, while the bit latches associated with sense amplifiersSA[32:63] are loaded with all 1's, where a 1 stored in the bit latchcorresponds with a “do-not-program state”. After transferring the dataout of the SRAM into the bit latches, the process is ready for applyingthe bias voltages to the array.

FIG. 6B illustrates steps 4 a, 4 b, 4 c and 4 d, of the simplified flow,which are executed in parallel so they overlap at least partially intime. In particular, the data from the bit latches associated with senseamplifiers SA[0:31] is programmed into corresponding cells in the leftbank of the array 200 (step 4 a), while data in cells in the right bankof the array is sensed (step 4 b), and then loaded on the bus 203 (step4 c). Meanwhile the first chunk of data is copied back to the bus (step4 d). Steps 4 a-4 d result and data on the bus that includes the firstchunk of data to be program unmodified, and the second chunk of dataequal to data sensed from corresponding cells in the array prior toprogramming.

FIG. 6C illustrates the last step in the process, in which the pagebuffer is updated in response to the program while verify sequence. Inparticular, the data from the bus is compared with the data stored inthe page buffer. If the corresponding bit in the page buffer matches thedata on the bus, then the value of the bit in the page buffer is updatedto “1” indicating a “do-not-program” state because the cycle hasverified that the memory cell already stores the correct data. Becauseof an erase cycle prior to programming as applied in flash memorytechnologies known in the art, there should not be any cells in theright bank in a programmed state during the first cycle. Therefore, anymismatches of the data sensed from the array with data stored in thepage buffer will correspond to bit positions selected for programming.

FIGS. 6A-6C illustrate programming a chunk of data in the left bankwhile verifying a chunk of data in the right bank. The operation isexecuted again, with step 2 inverted so that all 1's indicating the“do-not-program” state, are loaded into the bit latches associated withsense amplifiers SA[0:31], and steps 4 a-4 d executed on the oppositeside of the array to program bits 32-63 while verifying bits 0-31.During this second cycle, the only cells in the left bank (bits 0-31) ina program state will be those programmed during the previous programwhile verify cycle. Therefore, any mismatches of data sensed from thearray with data is stored in the page buffer will correspond to bitpositions selected for programming, that did not successfully passprogram verify. The sequence is repeated on the left and right sides ofthe array until all the bits in the two chunks of data are successfullyprogrammed. Then, the next two chunks of data are programmed iterativelyuntil the entire page is done.

FIG. 7 is a flow chart illustrating a page program operation in aprogram while verify device based on split pages. The algorithm starts apage program command (block 300). A page of data is then loaded into thepage buffer, where the page comprises an even number N of chunks, and anindex n for the algorithm is set to zero (block 301). Next, steps 302and 303 are executed in parallel, programming chunk(n) in the left halfpage, and verifying chunk (n+1) in the right half page, applying theprocedures such as described above with reference to FIGS. 6A-6C. Next,the page buffer SRAM is updated based on the results of the verifyoperations (block 304). Next, steps 305 and 306 are executed inparallel, verifying chunk(n) in the left half page, and programmingchunk (n+1) in the right half page. Then, the page buffer SRAM isupdated again based on the results of the verify operations (block 307).At this point, both chunks (n) and (n+1) have been subjected to oneprogram pulse each. The updated page buffer is checked to determinewhether both chunks have passed the verify operation (block 308). Ifnot, in the algorithm branches to block 309 determine whether a retrylimit has been reached. If the retry limit has not been reached, thenthe algorithm loops back to steps 302 and 303 to retry the program whileverify sequence for chunks (n) and (n+1). If at block 309, the retrylimit had been reached, then the procedure has failed (block 310).

If at block 308, both chunks (n) and (n+1) pass verify, then the indexis tested to determine whether all the chunks in the page have beenprogrammed, by determining whether n+1 is equal to N−1. If all chunkshave not been programmed, then the index n is incremented by 2 at block312. Then the process loops back to steps 302 and 303 to execute theprogram while verify sequence for the next pair of chunks. If at block311, it is determined that all the chunks in the page have beensuccessfully programmed and verified, then the page program process ends(block 313).

Embodiments of the technology can be applied to memory cells storingmultiple bits per cell that require multiple threshold levels to beprogrammable in a single cell, or one bit per cell as suits the need toparticular application.

The technology described is suitable for use in a wide variety of flashmemory architectures, including NOR flash arrays, NAND flash arrays,virtual ground arrays, or other array configurations. The technologydescribed is also suitable for arrays implemented using floating gatememory cells, arrays implemented using nitride charge trapping memorycells, and arrays implemented using other types of memory cells.

Technology described herein provides an integrated circuit memory deviceincluding nonvolatile memory where program and program verify processescan be executed at the same time in a split page architecture. Using asplit page architecture, the left side and right side of the array canbe provided different bias conditions supporting programming and programverifying at the same time. In this manner, the time required for theverify process in one part of the page can be hidden partially orcompletely during the time required for a program operation on adifferent part of the page.

While the present invention is disclosed by reference to the preferredembodiments and examples detailed above, it is to be understood thatthese examples are intended in an illustrative rather than in a limitingsense. It is contemplated that modifications and combinations willreadily occur to those skilled in the art, which modifications andcombinations will be within the spirit of the invention and the scope ofthe following claims.

1. A method for programming a memory device with input data in memorycells identified by respective memory cell addresses, comprising:loading a set of data to be stored in a set of memory cells, the set ofmemory cells consisting of memory cells characterized by havingidentical higher order address bits in the respective memory celladdresses; executing a program sequence, the program sequence includingfirst applying a program bias to a first part of the set of memorycells; and second applying the program bias to the second part of theset of memory cells while applying the program verify bias to, andsensing data stored in, the first part of the set of memory cells. 2.The method of claim 1, wherein said set of memory cells comprises cellsin a row of cells in a memory array, and wherein the first pad of theset of memory cells is coupled to a first word line along the row andthe second part of the set of memory cells is coup led to a second wordline along the row.
 3. The method of claim 1, wherein said set of memorycells comprises cells in a first row of memory cells in a first sectorcoupled to a first word line along the first row, and cells in a secondrow of memory cells in a second sector coupled to a second word linealong the second row.
 4. The method of claim 1, including: storing apage of data in a buffer on the memory device, to be stored in acorresponding page of memory cells identified by said higher orderaddress bits; and wherein the set of data includes data from said page.5. The method of claim 1, including: storing a page of data in a bufferon the memory device, to be stored in a corresponding page of memorycells identified by said higher order address bits; and wherein the pageof data includes a plurality of chunks of data that can be sensed inparallel, and said first part comprises a first chunk from the pluralityof chunks and the second part comprises a second chunk from saidplurality of chunks.
 6. The method of claim 1, including: storing a pageof data in a buffer on the memory device, to be stored in acorresponding page of memory cells identified by said higher orderaddress bits; and wherein the page of data includes a plurality ofchunks of data that can be sensed in parallel, and said first partcomprises a first chunk from the plurality of chunks and the second partcomprises a second chunk from said plurality of chunks, and furtherincluding repeatedly executing said program sequence to program theplurality of chunks of the page.
 7. The method of claim 6, wherein saidpage comprises at least 1000 bits and said chunks comprise at least 16bits.
 8. The method of claim 1, wherein said program sequence includesupdating the set of data in response to said sensing in the secondapplying, and if the updated set of data does not indicate success ofthe programming sequence, then retrying the program sequence in responseto the updated set of data.
 9. An integrated circuit, comprising: anarray of memory cells, including a plurality of bit lines and aplurality of word lines; decoder circuitry coupled to the plurality ofbit lines and the plurality of word lines responsive to addresses toaccess memory cells in the array; sense circuitry coupled to the array,the sense circuitry arranged to sense data in a plurality of memorycells in parallel; buffer circuitry coupled to the array; and circuitrycoupled to the array, the decoder circuitry and the buffer, to controlexecution of program operations, the program operations including a loadsequence to load a set of data in the buffer circuitry, the set of datato be stored in a set of memory cells in the array, the set of memorycells consisting of memory cells accessible by addresses havingidentical higher order address bits; and a program sequence, the programsequence including first applying a program bias to a first part of theset of memory cells; and second applying the program bias to the secondpart of the set of memory cells while applying the program verify biasto, and sensing data stored in, the first part of the set of memorycells.
 10. The integrated circuit of claim 9, wherein said set of memorycells comprises cells in a row of cells in a memory array, and whereinthe first part of the set of memory cells is coupled to a first wordline along the row and the second part of the set of memory cells iscoupled to a second word line along the row, and wherein said decodercircuitry enables word line drivers for the first word line and thesecond word line in response to said identical higher order addressbits, and selectively applies the program bias and the program verifybias to the first and second word lines during the program sequence. 11.The integrated circuit of claim 9, wherein said set of memory cellscomprises cells in a first row of memory cells in a first sector coupledto a first word line along the first row, and cells in a second row ofmemory cells in a second sector coupled to a second word line along thesecond row, and wherein said decoder circuitry enables the first secondand the second sector and word line drivers for the first word line andthe second word line in response to said identical higher order addressbits, and selectively applies the program bias and the program verifybias to the first and second word lines during the program sequence. 12.The integrated circuit of claim 9, wherein said buffer circuitrycomprises a page buffer to store a page of data, to be stored in acorresponding page of memory cells identified by said higher orderaddress bits.
 13. The integrated circuit of claim 9, wherein said buffercircuitry comprises a page buffer to store a page of data, to be storedin a corresponding page of memory cells identified by said higher orderaddress bits, and latches coupled with the decoder circuitry which storea chunk of data that can be programmed in parallel, wherein the page ofdata includes a plurality of chunks of data that can be sensed inparallel, and said first part comprises a first chunk from the pluralityof chunks and the second part comprises a second chunk from saidplurality of chunks.
 14. The integrated circuit of claim 13, whereinsaid program operations include: repeatedly executing said programsequence to program the plurality of chunks of the page.
 15. Theintegrated circuit of claim 14, wherein said page comprises at least1000 bits and said chunks comprise at least 16 bits.
 16. The integratedcircuit of claim 9, wherein said buffer circuitry comprises latchescoupled with the decoder circuitry which store a chunk of data that canbe programmed in parallel, and said program sequence includes updatingdata in the latches in response to said sensing in the second applying,and if the updated data does not indicate success of the programmingsequence, then retrying the program sequence in response to the updateddata.
 17. A method for programming a memory device with input data inmemory cells identified by respective memory cell addresses, comprising:loading a set of data to be stored in a set of memory cells, the set ofmemory cells consisting of memory cells characterized by havingidentical higher order address; bits in the respective memory celladdresses; executing a program sequence, the program sequence includingapplying a program bias to a first part of the set of memory cells,while applying a program verify bias to, and sensing data stored in, thesecond part of the set of memory cells.
 18. The method of claim 1,wherein said set of memory cells comprises cells in a row of cells in amemory array, and wherein the first part of the set of memory cells iscoupled to a first word line along the row and the second part of theset of memory cells is coupled to a second word line along the row. 19.The method of claim 1, wherein said set of memory cells comprises cellsin a first row of memory cells in a first sector coupled to a first wordline along the first row, and cells in a second row of memory cells in asecond sector coupled to a second word line along the second row. 20.The method of claim 1, including: storing a page of data in a buffer onthe memory device, to be stored in a corresponding page of memory cellsidentified b said higher order address bit; and wherein the set of dataincludes data from said page.
 21. The method of claim 1, including:storing a page of data in a buffer on the memory device, to be stored ina corresponding page of memory cells identified by said higher orderaddress bits; and wherein the page of data includes a plurality ofchunks of data that can be sensed in parallel.